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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB1346 APPLICATIONS *Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE 60 60 6 3 8 1.75 UNIT V V .cn mi e V A Collector Current-Peak Collector Power Dissipation @Ta=25 A PC Collector Power Dissipation @TC=25 TJ Tstg Junction Temperature 30 W 150 Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 5mA; RBE= IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 2A; IB= 0.2A B 2SD2027 MIN 60 60 6 TYP. MAX UNIT V V V 1.0 1.0 100 100 280 V V A A IC= 0.5A; VCE= 5V Output Capacitance Current-Gain--Bandwidth Product w w S 140-280 w. .cn mi cse is VCB= 40V; IE=0 VEB= 4V; IC=0 IC= 0.5A; VCE= 5V IC= 3A ; VCE= 5V 70 20 IE= 0; VCB= 10V, f= 1MHz IC= 0.5A ; VCE= 5V 60 8 pF MHz hFE-1 Classifications Q 70-140 R 100-200 isc Websitewww.iscsemi.cn 2 |
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